document number: 94088 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 21-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 insulated ultrafast rectifier module, 200 a UFB200FA40P vishay semiconductors note (1) maximum i rms current admitted 100 a to do not exceed the maximum termperature of terminals features ? two fully independent diodes ? ceramic fully insulated package (v isol = 2500 v ac ) ? ultrafast reverse recovery ? ultrasoft reverse recovery current shape ? low forward voltage ? optimized for power conver sion: welding and industrial smps applications ? industry standard outline ? plug-in compatible with other sot-227 packages ? easy to assemble ? direct mounting to heatsink ? ul approved file e78996 ? compliant to rohs directive 2002/95/ec ? designed and qualified for industrial level description the UFB200FA40P insulated modules integrate two state of the art ultrafast recovery rectif iers in the compact, industry standard sot-227 package. the planar structure of the diodes, and the platinum doping life time control, provide a ultrasoft recovery current shape, together with the best overall performance, ruggedness and reliability characteristics. these devices are thus intended for high frequency applications in which the switching energy is designed not to be predominant portion of th e total energy, such as in the output rectification stage of welding machines, smps, dc-to-dc converters. their extremely optimized stored charge and low recovery current reduce both over dissipation in the switching elements (and snubbers) and emi/rfi. note (1) maximum i rms current admitted 100 a to do not exceed the maximum termpera ture of terminals product summary v r 400 v i f(av) (1) at t c = 87 c per module 200 a t rr 60 ns sot-227 absolute maximum ratings parameter s ymbol te s t condition s max. unit s cathode to anode voltage v r 400 v continuous forward current per diode i f (1) t c = 25 c 202 a t c = 90 c 117 single pulse forwar d current per diode i fsm t c = 25 c 1300 maximum power dissip ation per module p d t c = 90 c 240 w rms isolation voltage v isol any terminal to case, t = 1 minute 2500 v operating junction and storage temperatures t j , t stg - 55 to 150 c
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94088 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 21-jul-10 UFB200FA40P vishay semiconductors insulated ultrafast rectifier module, 200 a electrical specifications per diode (t j = 25 c unless otherwise specified) parameter s ymbol te s t condition s min. typ. max. unit s cathode to anode breakdown voltage v br i r = 100 a 400 - - v forward voltage v fm i f = 100 a - 1.04 1.24 i f = 100 a, t j = 150 c - 0.94 1.00 reverse leakage current i rm v r = v r rated - - 50 a t j = 150 c, v r = v r rated - - 4 ma junction capacitance c t v r = 400 v - 100 - pf dynamic recovery characteristics per diode (t j = 25 c unless otherwise specified) parameter s ymbol te s t condition s min. typ. max. unit s reverse recovery time t rr i f = 1.0 a, di f /dt = 200 a/s, v r = 30 v - - 60 ns t j = 25 c i f = 150 a di f /dt = 200 a/s v r = 200 v -93- t j = 125 c - 172 - peak recovery current i rrm t j = 25 c - 10.5 - a t j = 125 c - 20.2 - reverse recovery charge q rr t j = 25 c - 490 - nc t j = 125 c - 1740 - thermal - mechanical specifications parameter s ymbol te s t condition s min. typ. max. unit s junction to case, si ngle leg conducting r thjc --0.5 c/w junction to case, both leg conducting - - 0.25 case to heatsink r thcs flat, greased surface - 0.05 - weight -30- g mounting torque -1.3-nm
document number: 94088 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 21-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 UFB200FA40P insulated ultrafast rectifier module, 200 a vishay semiconductors fig. 1 - typical forward voltage drop characteristics (per diode) fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics (per diode) 1 10 t j = 150 c t j = 125 c t j = 25 c 0 v f - forward voltage drop (v) i f - instantaneous forward current (a) 100 1000 0.4 0.8 1.2 1.6 0.01 0.1 1 10 100 0 200 300 v r - reverse voltage (v) i r - reverse current (a) t j = 150 c t j = 125 c t j = 25 c 400 100 0.001 1000 1000 10 100 1000 10 v r - reverse voltage (v) c t - junction capacitance (pf) t j = 25 c 10 000 100 0.01 0.1 0.0001 0.001 0.01 0.1 1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) . . p dm t 1 t 2 notes: 1. duty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c 1 single pulse (thermal resistance) 10
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94088 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 21-jul-10 UFB200FA40P vishay semiconductors insulated ultrafast rectifier module, 200 a fig. 5 - maximum allowable case temperature vs. average forward current (per leg) fig. 6 - forward power loss characteristics (per leg) fig. 7 - typical reverse recovery time vs. di f /dt fig. 8 - typical stored charge vs. di f /dt note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = 80 % rated v r 0 allowable case temperature (c) i f(av) - average forward current (a) 140 160 80 dc 60 40 120 240 20 40 80 160 100 120 200 0 square wave (d = 0.50) rated v r applied see note (1) 040 average power loss (w) i f(av) - average forward current (a) 0 d = 0.01 d = 0.02 d = 0.05 d = 0.10 d = 0.20 d = 0.50 dc 20 80 60 120 160 120 160 80 40 60 100 140 20 100 140 rms limit 100 1000 t rr (ns) di f /dt (a/s) 100 200 v r = 200 v t j = 125 c t j = 25 c 150 250 50 i f = 150 a i f = 75 a 100 1000 q rr (nc) di f /dt (a/s) 1000 5000 3500 v r = 200 v t j = 125 c t j = 25 c 2500 4000 0 500 1500 3000 2000 4500 i f = 150 a i f = 75 a
document number: 94088 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 21-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 5 UFB200FA40P insulated ultrafast rectifier module, 200 a vishay semiconductors fig. 9 - reverse recovery parameter test circuit fig. 10 - reverse recovery waveform and definitions irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve dened by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94088 6 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 21-jul-10 UFB200FA40P vishay semiconductors insulated ultrafast rectifier module, 200 a ordering information table circuit configuration link s to related document s dimensions www.vishay.com/doc?95036 packaging information www.vishay.com/doc?95037 1 - ultrafast rectifier 2 - ultrafast pt diffused 3 - current rating (200 = 200 a) 4 - circuit configuration (2 separate diodes, parallel pin-out) 5 - package indicator (sot-227 standard isolated base) 6 - voltage rating (40 = 400 v) 7 - none = standard production p = lead (pb)-free quantity per tube is 10, m4 screw and washer included device code 5 13 24 67 uf b 200 f a 40 p 1 4 2 3
document number: 95036 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 28-aug-07 1 sot-227 outline dimensions vishay semiconductors dimensions in millimeters (inches) notes ? dimensioning and toleranc ing per ansi y14.5m-1982 ? controlling dime nsion: millimeter 38.30 (1.508) 37.80 (1.488) -a- 4 12 3 12.50 (0.492) 7.50 (0.295) ? 4.40 (0.173) ? 4.20 (0.165) 30.20 (1.189) 29.80 (1.173) 15.00 (0.590) 6.25 (0.246) 25.70 (1.012) 25.20 (0.992) -b- r full chamfer 2.00 (0.079) x 45 2.10 (0.082) 1.90 (0.075) 8.10 (0.319) 7.70 (0.303) 4 x 2.10 (0.082) 1.90 (0.075) -c- 0.12 (0.005) 12.30 (0.484) 11.80 (0.464) mmm 0.25 (0.010) ca b 4 x m4 nuts
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